to ? 92s 1. emitter 2. collector 3. base to-92s plastic-encapsulate transistors KSD1021 transistor (npn) features z complementary to ksb811 maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =1v, i c =100ma 70 400 collector-emitter saturation voltage v ce(sat) i c =1a,i b =0.1a 0.5 v base-emitter saturation voltage v be (sat) i c =1a,i b =0.1a 1.2 v collector output capacitance c ob v cb =6v,i e =0, f=1mhz 16 pf transition frequency f t v ce =6v,i c =10ma 130 mhz classification of h fe rank o y g range 70-140 120-240 200-400 symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current 1 a p c collector power dissipation 350 mw r ja thermal resistance from junction to ambient 357 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
|
